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Journal articles

• Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Huffaker DL, Tan CH & David JPR (2024) . Applied Physics Letters, 124(25).
• Fleming F, Yi X, Mirza MMA, Jin X, Kirdoda J, Dumas DCS, Saalbach L, Modak M, Muir DAS, Smith C , Coughlan C et al (2024) . Optics Express, 32(11), 19449-19449.
• Ronningen TJ, Kodati SH, Jin X, Lee S, Jung H, Tao X, Lewis HIJ, Schwartz M, Gajowski N, Martyniuk P , Guo B et al (2023) . Applied Physics Letters, 123(13).
• Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Tian Q, Huffaker DL, Tan CH & David JPR (2023) . Optics Express, 31(20), 33141-33141.
• Sreerag SJ, Sharma AS, Rockett TBO, David JPR, Richards RD & Kini RN (2023) . Applied Physics A, 129(8).
• Lewis HIJ, Jin X, Guo B, Lee S, Jung H, Kodati SH, Liang B, Krishna S, Ong DS, Campbell JC & David JPR (2023) . Sci Rep, 13(1), 9936.
• Jung H, Lee S, Liu Y, Jin X, David JPR & Krishna S (2023) . Applied Physics Letters, 122(22).
• Batool Z, Hild K, Marko I, Mohmad AR, David JPR, Lu X, Tiedje T & Sweeney SJ (2023) . Journal of Materials Science: Materials in Electronics, 34(6).
• Lee S, Jin X, Jung H, Lewis H, Liu Y, Guo B, Kodati SH, Schwartz M, Grein C, Ronningen TJ , David JPR et al (2023) . Optica, 10(2).
• Singh R, O'Farrell T, Biagi M, Penty RV & David JPR (2023) . Journal of Lightwave Technology, 1-11.
• Lee HJ, Ali Gamel MM, Ker PJ, Jamaludin MZ, Wong YH, Yap KS, Willmott JR, Hobbs MJ, David JPR & Tan CH (2023) . Materials Science in Semiconductor Processing, 153, 107135-107135.
• Bui T-C, Singh R, OFarrell T, Scarano G, David JPR & Biagi M (2022) . Journal of Lightwave Technology, 1-11.
• Rockett TBO, Adham NA, Harun F, David JPR & Richards RD (2022) . Journal of Crystal Growth, 589.
• Bailey NJ, Carr MR, David JPR & Richards RD (2022) . Journal of Nanomaterials, 2022.
• Ong DS, Tan AH, Choo KY, Yeoh KH & David JPR (2022) . Journal of Physics D: Applied Physics, 55(6), 065105-065105.
• Bailey NJ, Rockett TBO, Flores S, Reyes DF, David JPR & Richards RD (2022) . Scientific Reports, 12.
• Guo B, Jin X, Lee S, Ahmed SZ, Jones A, Xue X, Liang B, Lewis H, Kodati SH, Chen D , Ronningen TJ et al (2022) . Journal of Lightwave Technology.
• Liu Y, Yi X, Bailey NJ, Zhou Z, Rockett TBO, Lim LW, Tan CH, Richards RD & David JPR (2021) . Nature Communications, 12(1).
• Gamel MMA, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David JPR & Jamaludin MZ (2021) . Scientific Reports, 11(1).
• Ahmed J, Xie S, Liang B, Yi X, Jin X, Kesaria M, David JPR & Huffaker DL (2021) . IEEE Journal of Quantum Electronics, PP(99), 1-1.
• Lewis HIJ, Qiao L, Cheong JS, Baharuddin ANAP, Krysa AB, Ng BK, Green JE & David JPR (2021) . IEEE Transactions on Electron Devices, 1-6.
• Jin X, Xie S, Liang B, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong D-S et al (2021) . IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
• Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) . Sains Malaysiana, 49(10), 2559-2564.
• Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) . Semiconductor Science and Technology.
• Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marín N, David JPR & González D (2019) . Applied Surface Science, 485, 29-34.
• Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH & David JPR (2019) . Nature Photonics.
• Hossain MM, David JPR & Hayat MM (2019) . Journal of Lightwave Technology, 37(13), 3315-3323.
• Richards RD, Rockett TB, Nawawi MR, Harun F, Mellor A, Wilson T, Christou C, Chen S & David JPR (2018) . Semiconductor Science and Technology, 33(9).
• Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH & David JPR (2018) . Scientific Reports, 8(1).
• Qiao L, Dimler SJ, Baharuddin ANAP, Green JE & David JPR (2018) . Measurement Science and Technology, 29(6), 065015-065015.
• Wilson T, Hylton NP, Harada Y, Pearce P, Alonso-Álvarez D, Mellor A, Richards RD, David JPR & Ekins-Daukes NJ (2018) . Scientific Reports, 8(1).
• Beling A, David J, Hutchinson M, Schow C & Shi J-W (2018) . IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 1-3.
• Singh R, O’Farrell T, Biagi M & David JPR (2018) . Physical Communication, 31, 160-168.
• Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ & David JPR (2017) . Solar Energy Materials and Solar Cells, 172, 238-243.
• Hossain MM, Ray S, Cheong JS, Qiao L, Baharuddin ANAP, Hella MM, David JPR & Hayat MM (2017) . Journal of Lightwave Technology, 35(11), 2315-2324.
• Cheong JS, Baharuddin A, Ng JS, Krysa AB & David JPR (2017) . Solar Energy Materials and Solar Cells, 164, 28-31.
• Xie S, Kim H, Lee W-J, Farrell AC, David JP & Huffaker DL (2016) . Nano Advances.
• Jamil E, Cheong JS, David JPR & Hayat MM (2016) . Optics Express, 24(19), 21597-21608.
• Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) . IEEE Photonics Technology Letters, 28(22), 2495-2498.
• Balanta MAG, Kopaczek J, Orsi Gordo V, Santos BHB, Rodrigues AD, Galeti HVA, Richards RD, Bastiman F, David JPR, Kudrawiec R & Galvão Gobato Y (2016) . Journal of Physics D: Applied Physics, 49(35).
• David J (2016) . Nature Photonics, 10(6), 364-366.
• Auckloo A, Cheong JS, Meng X, Tan, CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) . Journal of Instrumentation, 11(3).
• White BS, Sandall I, Zhou X, Krysa AB, McEvan K, David J & Tan C (2016) . Journal of Lightwave Technology, 34(11), 2639-2644.
• Qiao L, Cheong JS, Ong JSL, Ng JS, Krysa AB, Green JE & David JPR (2016) . IEEE Photonics Technology Letters, 28(4), 481-484.
• Cheong JS, Ng JS, Krysa AB, Ong JSL & David JPR (2015) . Journal of Physics D: Applied Physics, 48(40), 405101-405101.
• Thomas T, Mellor A, Hylton NP, Führer M, Alonso-Álvarez D, Braun A, Ekins-Daukes NJ, David JPR & Sweeney SJ (2015) . Semiconductor Science and Technology, 30(9), 094010-094010.
• White BS, Sandall IC, David JPR & Chee Hing Tan (2015) . IEEE Transactions on Electron Devices, 62(9), 2928-2932.
• Mohmad AR, Bastiman F, Hunter CJ, Harun F, Reyes DF, Sales DL, Gonzalez D, Richards RD, David JPR & Majlis BY (2015) . Semiconductor Science and Technology, 30(9), 094018-094018.
• Kopaczek J, Linhart WM, Baranowski M, Richards RD, Bastiman F, David JPR & Kudrawiec R (2015) . Semiconductor Science and Technology, 30(9), 094005-094005.
• Richards RD, Bastiman F, Walker D, Beanland R & David JPR (2015) . Semiconductor Science and Technology, 30(9), 094013-094013.
• Zhou Z, Mendes DF, Richards RD, Bastiman F & David JPR (2015) . Semiconductor Science and Technology, 30(9), 094004-094004.
• Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D & David JPR (2015) . Journal of Crystal Growth, 425, 237-240.
• Jeng Shiuh Cheong , Hayat MM, Xinxin Zhou & David JPR (2015) . IEEE Transactions on Electron Devices, 62(6), 1946-1952.
• Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E & Krishna S (2015) . IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
• Kudrawiec R, Kopaczek J, Polak MP, Scharoch P, Gladysiewicz M, Misiewicz J, Richards RD, Bastiman F & David JPR (2014) . Journal of Applied Physics, 116(23), 233508-233508.
• Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) . Optics Express, 22(19), 22608-22615.
• Singh R, O'Farrell T & David J (2014) . Journal of Lightwave Technology, 32(14), 2582-2592.
• Mohmad AR, Bastiman F, Hunter CJ, Richards RD, Sweeney SJ, Ng JS, David JPR & Majlis BY (2014) . Physica Status Solidi (B) Basic Research, 251(6), 1276-1281.
• Sandall IC, Bastiman F, White B, Richards R, Mendes D, David JPR & Tan CH (2014) . Applied Physics Letters, 104(17).
• Cheong JS, Ong J, Ng JS, Krysa A & David JP (2014) . IEEE Journal of Selected Topics in Quantum Electronics, 20(6).
• Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) . Journal of Instrumentation, 9.
• Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS & David JPR (2014) . Journal of Crystal Growth, 390, 120-124.
• Zhou X, Hobbs MJ, White BS, David JPR, Willmott JR & Tan CH (2014) . IEEE Transactions on Electron Devices, 61(3), 838-843.
• Ong JSL, Ng JS, Krysa AB & David JPR (2014) . JOURNAL OF APPLIED PHYSICS, 115(6).
• El-Howayek G, Zhang C, Li Y, Ng JS, David JPR & Hayat MM (2014) . IEEE PHOTONICS JOURNAL, 6(1).
• Reyes DF, Bastiman F, Hunter CJ, Sales DL, Sanchez AM, David JPR & González D (2014) . Nanoscale Research Letters, 9(1), 1-8.
• Dominguez L, Reyes DF, Bastiman F, Sales DL, Richards RD, Mendes D, David JPR & Gonzalez D (2013) . APPLIED PHYSICS EXPRESS, 6(11).
• Tan SL, Soong WM, Green JE, Steer MJ, Zhang S, Tan LJJ, Ng JS, Marko IP, Sweeney SJ, Adams AR , Allam J et al (2013) . Applied Physics Letters, 103(10).
• Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) . Semiconductor Science and Technology, 28(9).
• Reyes DF, Gonzalez D, Bastiman F, Dominguez L, Hunter CJ, Guerrero E, Roldan MA, Mayoral A, David JPR & Sales DL (2013) . APPLIED PHYSICS EXPRESS, 6(4).
• Richards R, Bastiman F, Hunter CJ, Mohmad AR, David JPR & Ekins-Daukes N (2013) . Conference Record of the IEEE Photovoltaic Specialists Conference, 303-305.
• Ker PJ, David JPR & Tan CH (2012) . Optics Express, 20(28), 29568-29576.
• Green JE, David JPR & Tozer RC (2012) . Measurement Science and Technology, 23(12).
• Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) . IEEE Transactions on Electron Devices, 59(4), 1030-1036.
• Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) . IEEE Transactions on Electron Devices, 59(4), 1063-1067.
• Marshall ARJ, Nunna K, Tan SL, Reyner CJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) . Proceedings of SPIE - The International Society for Optical Engineering, 8541.
• Hunter CJ, Bastiman F, Mohmad AR, Richards R, Ng JS, Sweeney SJ & David JPR (2012) . IEEE Photonics Technology Letters, 24(23), 2191-2194.
• Tan SL, Hunter CJ, Zhang S, Tan LJJ, Goh YL, Ng JS, David JPR, Marko IP, Sweeney SJ, Adams AR & Allam J (2012) . Journal of Electronic Materials, 1-9.
• Mohmad AR, Bastiman F, Hunter CJ, Richards R, Sweeney SJ, Ng JS & David JPR (2012) . Applied Physics Letters, 101(1).
• Green JE, Tozer RC & David JPR (2012) . IEEE Transactions on Circuits and Systems.
• Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) . Optics Express, 20(10), 10446-10452.
• Ivanov T, Donchev V, Germanova K, Tellaleva T, Borissov K, Hongpinyo V, Vines P, David JPR & Ooi BS (2012) . Journal of Physics: Conference Series, 356(1).
• Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices.
• Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) . Journal of Crystal Growth, 341(1), 19-23.
• Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2012) . Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 259-261.
• Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) . IEEE Photonics Technology Letters, 24(3), 218-220.
• Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM. Journal of Crystal Growth.
• Ker PJ, Marshall ARJ, David JPR & Tan CH (2012) . Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 310-313.
• Bastiman F, Mohmad ARB, Ng JS, David JPR & Sweeney SJ (2011) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth.
• Marshall ARJ, Ker PJ, Krysa A, David JPR & Tan CH (2011) . Opt Express, 19(23), 23341-23349.
• Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2011) . IEEE J QUANTUM ELECT, 47(8), 1123-1128.
• Mohmad AR, Bastiman F, Hunter CJ, Ng JS, Sweeney SJ & David JPR (2011) . APPL PHYS LETT, 99(4).
• Tan SL, Zhang SY, Soong WM, Goh YL, Tan LJJ, Ng JS, David JPR, Marko IP, Adams AR, Sweeney SJ & Allam J (2011) . IEEE ELECTR DEVICE L, 32(7), 919-921.
• Hasbullah NF, David JPR & Mowbray DJ (2011) . J APPL PHYS, 109(11).
• Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) . IEEE T ELECTRON DEV, 58(6), 1696-1701.
• Marshall ARJ, Vines P, Ker PJ, David JPR & Tan CH (2011) . IEEE J QUANTUM ELECT, 47(6), 858-864.
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2011) . IEEE J QUANTUM ELECT, 47(5), 607-613.
• Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2011) . APPL PHYS LETT, 98(12).
• Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) . Journal of Instrumentation, 6(12).
• Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) . Journal of Instrumentation, 6(12).
• Hasbullah NF & David JPR (2011) . 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts, 32-35.
• Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact Ionization Coefficients in Al0.52In0.48P. IEEE Electron Device Letters.
• Ong JSL, Ng JS, Krysa AB & David JPR (2011) . IEEE Electron Device Letters, 32(11), 1528-1530.
• Hasbullah NF, David JPR & Mowbray DJ (2011) . AIP Conference Proceedings, 1328, 136-138.
• Tan CH, Vines P, Hobbs M, Anderson B, Hugues M & David J (2011) . Infrared Physics and Technology, 54(3), 228-232.
• Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) . IEEE Transactions on Electron Devices, 58(2), 486-489.
• Ong DSG, Hayat MM, David JPR & Ng JS (2011) . IEEE Photonics Technology Letters, 23(4), 233-235.
• Tan LJJ, Soong WM, David JPR & Ng JS (2011) . IEEE Transactions on Electron Devices, 58(1), 103-106.
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2011) . IEEE Journal of Quantum Electronics, 47(2), 190-197.
• Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) . NUCL INSTRUM METH A, 621(1-3), 453-455.
• Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) . IEEE J QUANTUM ELECT, 46(8), 1153-1157.
• Hasbullah NF, Hopkinson M, Alexander RR, Hogg RA, David JPR, Badcock TJ & Mowbray DJ (2010) . IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
• Marshall ARJ, David JPR & Tan CH (2010) . IEEE Transactions on Electron Devices, 57(10), 2631-2638.
• Rees GJ & David JPR (2010) . Journal of Physics D: Applied Physics, 43(24).
• Ong DSG, Ng JS, Hayat MM, Sun P & David JPR (2009) . J LIGHTWAVE TECHNOL, 27(15), 3294-3302.
• Sanchez AM, Beanland R, Hasbullah NF, Hopkinson M & David JPR (2009) . J APPL PHYS, 106(2).
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2009) . IEEE PHOTONIC TECH L, 21(13), 866-868.
• Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) . IEEE J QUANTUM ELECT, 45(5-6), 566-571.
• Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ & Mowbray DJ (2009) . IEEE J QUANTUM ELECT, 45(1-2), 79-85.
• Loh WS, Goh EZJ, Vassilevski K, Nikitina I, David JPR, Wright NG & Johnson CM (2008) . Materials Research Society Symposium Proceedings, 1069, 245-250.
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . APPL PHYS LETT, 93(11).
• Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) . NUCL INSTRUM METH A, 594(2), 202-205.
• Loh WS, Ng BK, Ng JS, Soloviev SI, Cha HY, Sandvik PM, Johnson CM & David JPR (2008) . IEEE T ELECTRON DEV, 55(8), 1984-1990.
• David JPR & Tan CH (2008) . IEEE J SEL TOP QUANT, 14(4), 998-1009.
• Mun SCLT, Tan CH, Goh YL, Marshall ARJ & David JPR (2008) . J APPL PHYS, 104(1).
• Tan LJJ, Ng JS, Tan CH & David JPR (2008) . IEEE J QUANTUM ELECT, 44(3-4), 378-382.
• Beanland R, David JPR & Sanchez AM (2008) . Journal of Applied Physics, 104(12).
• Buller GS, Warburton RE, Pellegrini S, Ng JS, David JPR, Tan LJJ, Krysa AB & Cova S (2007) . IET OPTOELECTRONICS, 1(6), 249-254.
• Groves C & David JPR (2007) . IEEE T COMMUN, 55(11), 2152-2158.
• Aivaliotis P, Vukmirovic N, Zibik EA, Cockburn JW, Indjin D, Harrison P, Groves C, David JPR, Hopkinson M & Wilson LR (2007) . J PHYS D APPL PHYS, 40(18), 5537-5540.
• Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) . IEEE T ELECTRON DEV, 54(8), 2051-2054.
• Dimler SJ, Ng JS, Tozer RC, Rees GJ & David JPR (2007) . IEEE J SEL TOP QUANT, 13(4), 919-925.
• Tan CH, Ng JS, Rees GJ & David JPR (2007) . IEEE J SEL TOP QUANT, 13(4), 906-910.
• Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) . IEEE J QUANTUM ELECT, 43(5-6), 503-507.
• Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ & Adams AR (2007) . J APPL PHYS, 101(6).
• Lau KS, Tozer RC, David JPR, Hopkinson M, Rees GJ, Carr M, Priestley N, Teoh YP & Dunn GM (2007) . SEMICOND SCI TECH, 22(3), 245-248.
• Ng JS, Tan CH, Rees GJ & David JPR (2007) . J MOD OPTIC, 54(2-3), 353-360.
• Groves C & David JPR (2007) Effects of Ionization Velocity and Dead Space on Avalanche Photodiode Bit Error Rate.. IEEE Trans. Communications, 55, 2033-2033.
• Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) . IEEE T ELECTRON DEV, 54(1), 11-16.
• Groves C & David JPR (2006) . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 859-860.
• Ng JS, Liu HY, Steer MJ, Hopkinson M & David JPR (2006) . MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
• Lau KS, Tan CH, Ng BK, Li KF, Tozer RC, David JPR & Rees GJ (2006) . MEAS SCI TECHNOL, 17(7), 1941-1946.
• Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) . IEEE J QUANTUM ELECT, 42(3-4), 397-403.
• Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Suarez F, Ng JS, Hopkinson M & David JPR (2006) . J APPL PHYS, 99(4).
• Bai J, Wang T, Comming P, Parbrook PJ, David JPR & Cullis AG (2006) . J APPL PHYS, 99(2).
• Massey DJ, David JPR & Rees GJ (2006) . IEEE Transactions on Electron Devices, 53(9), 2328-2334.
• Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) . IEEE PHOTONIC TECH L, 17(11), 2412-2414.
• Ng JS, Tan CH, David JPR & Rees GJ (2005) . IEEE J QUANTUM ELECT, 41(8), 1092-1096.
• Groves C, Tan CH, David JPR, Rees GJ & Hayat MM (2005) . IEEE T ELECTRON DEV, 52(7), 1527-1534.
• Wang T, Raviprakash G, Ranalli F, Harrison CN, Bai J, David JPR, Parbrook PJ, Ao JP & Ohno Y (2005) . J APPL PHYS, 97(8).
• Liu HY, Soong WM, Navaretti P, Hopkinson M & David JPR (2005) . APPL PHYS LETT, 86(6).
• Massey DJ, David JPR & Rees GJ (2005) . Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, 2005, 245-248.
• David JPR (2005) . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005, 369-370.
• Groves C, Chia CK, Tozer RC, David JPR & Rees GJ (2005) . IEEE J QUANTUM ELECT, 41(1), 70-75.
• Hogg R, Groom KM, Liu HY, Sellers IR, Ray SK, Badcock T, Gutierrez M, Hopkinson M, Ng JS, R. David JP , Mowbray DJ et al (2004) . Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
• Liu HY, Sellers IR, Gutierrez M, Groom KM, Soong WM, Hopkinson M, David JPR, Beanland R, Badcock TJ, Mowbray DJ & Skolnick MS (2004) . J APPL PHYS, 96(4), 1988-1992.
• Liu HY, Sellers IR, Badcock TJ, Mowbray DJ, Skolnick MS, Groom KM, Gutierrez M, Hopkinson M, Ng JS, David JPR & Beanland R (2004) . APPL PHYS LETT, 85(5), 704-706.
• Massey DJ, David JPR, Tan CH, Ng BK, Rees GJ, Robbins DJ & Herbert DC (2004) . J APPL PHYS, 95(10), 5931-5933.
• Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) . APPL PHYS LETT, 84(13), 2322-2324.
• Groves C, Harrison CN, David JPR & Rees GJ (2004) . Journal of Applied Physics, 96(9), 5017-5019.
• Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2004) Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8×3″ multiwafer reactor for optoelectronic applications. Design and Nature, 6, 107-110.
• Groves C, David JPR, Rees GJ & Ong DS (2004) . Journal of Applied Physics, 95(11 I), 6245-6251.
• Hambleton PJ, David JPR & Rees GJ (2004) . Journal of Applied Physics, 95(7), 3561-3564.
• Groves C, David JPR, Robson PN & Rees GJ (2004) . Proceedings of SPIE - The International Society for Optical Engineering, 5451, 426-433.
• Groves C, David JPR & Rees GJ (2004) Gain dependent avalanche duration and gain×bandwidth product in an avalanche photodiode. Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04, 30-31.
• Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS & David JPR (2003) . APPL PHYS LETT, 83(24), 4951-4953.
• Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) . APPL PHYS LETT, 83(14), 2820-2822.
• Yee M, Ng WK, David JPR, Houston PA, Tan CH & Krysa A (2003) . IEEE T ELECTRON DEV, 50(10), 2021-2026.
• Chia CK, Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M, Airey RJ & Robson PN (2003) . J APPL PHYS, 94(4), 2631-2637.
• Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2003) . IEEE T ELECTRON DEV, 50(8), 1724-1732.
• Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
• Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) . IEEE T ELECTRON DEV, 50(4), 901-905.
• Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) . IEE PROCEEDINGS-OPTOELECTRONICS, 150(2), 187-190.
• Yee M, Ng WK, David JPR, Houston PA & Harrison CN (2003) . APPL PHYS LETT, 82(8), 1224-1226.
• Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC & Weiner M (2003) Demonstration of 4H-SiC avalanche photodiodes linear array. SOLID-STATE ELECTRONICS, 47(2), 241-245.
• David J (2003) Low Noise Avalanche Photodiodes. Conference on Optical Fiber Communication, Technical Digest Series, 86, 336-337.
• Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. Institute of Physics Conference Series, 174, 263-266.
• Groves C, David JPR & Rees GJ (2003) . Semiconductor Science and Technology, 18(7), 689-692.
• Rees GJ & David JPR (2003) . Proceedings of SPIE - The International Society for Optical Engineering, 4999, 349-362.
• Groves C, Ghin R, David JPR & Rees GJ (2003) . IEEE Transactions on Electron Devices, 50(10), 2027-2031.
• Hambleton PJ, Plimmer SA, David JPR & Rees GJ (2003) . IEE Proceedings: Optoelectronics, 150(2), 167-170.
• Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2003) . IEEE Transactions on Electron Devices, 50(2), 347-351.
• Ong DS, Rees GJ & David JPR (2003) . Journal of Applied Physics, 93(7), 4232-4239.
• Tan CH, Hambleton PJ, David JPR, Tozer RC & Rees GJ (2003) . J LIGHTWAVE TECHNOL, 21(1), 155-159.
• Harrison CN, David JPR, Hopkinson M & Rees GJ (2002) . J APPL PHYS, 92(12), 7684-7686.
• Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M & Airey RJ (2002) . IEEE T ELECTRON DEV, 49(12), 2349-2351.
• Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
• Ng BK, Yan F, David JPR, Tozer RC, Rees GJ, Qin C & Zhao JH (2002) . IEEE PHOTONIC TECH L, 14(9), 1342-1344.
• Ng JS, David JPR, Rees GJ & Allam J (2002) . J APPL PHYS, 91(8), 5200-5202.
• Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
• Ng BK, David JPR, Tozer RC, Hopkinson M, Hill G & Rees GJ (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE PHOTONIC TECH L, 14(4), 522-524.
• Yan F, Qin C, Zhao JH, Weiner M, Ng BK, David JPR & Tozer RC (2002) . ELECTRON LETT, 38(7), 335-336.
• Yee M, Houston PA & David JPR (2002) Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor. J APPL PHYS, 91(3), 1601-1605.
• Jacob B, Robson PN, David JPR & Rees GJ (2002) . Journal of Applied Physics, 91(8), 5438-5441.
• Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2002) Non-equilibrium modelling of avalanche photodiode speed. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 490-491.
• Hambleton PJ, Plimmer SA, David JPR, Rees GJ & Dunn GM (2002) . Journal of Applied Physics, 91(3), 2107-2111.
• Ng BK, David JPR, Plimmer SA, Tozer RC, Rees GJ & Hopkinson M (2001) . IEE P-OPTOELECTRON, 148(5-6), 243-246.
• Ng BK, David JPR, Plimmer SA, Rees GJ, Tozer RC, Hopkinson M & Hill G (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE T ELECTRON DEV, 48(10), 2198-2204.
• Tan CH, David JPR, Rees GJ, Tozer RC & Herbert DC (2001) Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
• Jacob B, Robson PN, David JPR & Rees GJ (2001) Fokker-Planck model for nonlocal impact ionization in semiconductors. J APPL PHYS, 90(3), 1314-1317.
• Tan CH, David JPR, Plimmer SA, Rees GJ, Tozer RC & Grey R (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317.
• Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, 131-136.
• David JPR & Rees GJ (2001) Low noise avalanche photodiodes. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 693-694.
• Plimmer SA, David JPR, Jacob B & Rees GJ (2001) . Journal of Applied Physics, 89(5), 2742-2751.
• Ng BK, David JPR, Plimmer SA, Hopkinson M, Tozer RC & Rees GJ (2000) Impact ionization coefficients of Al0.8Ga0.2As. APPL PHYS LETT, 77(26), 4374-4376.
• Chia CK, David JPR, Plimmer SA, Rees GJ, Grey R & Robson PN (2000) Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures. J APPL PHYS, 88(5), 2601-2608.
• Tan CH, Clark JC, David JPR, Rees GJ, Plimmer SA, Tozer RC, Herbert DC, Robbins DJ, Leong WY & Newey J (2000) Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
• Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Plimmer SA, Chang KY & Roberts JS (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE T ELECTRON DEV, 47(5), 910-914.
• Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA , Hopkinson M et al (2000) . Phys Rev Lett, 84(4), 733-736.
• Plimmer SA, David JPR, Rees GJ & Robson PN (2000) . Semiconductor Science and Technology, 15(7), 692-699.
• Ong DS, Li KF, Plimmer SA, Rees GJ, David JPR & Robson PN (2000) . Journal of Applied Physics, 87(11), 7885-7891.
• Plimmer SA, David JPR & Ong DS (2000) . IEEE Transactions on Electron Devices, 47(5), 1080-1088.
• Flimmer SA, David JPR, Grey R & Rees GJ (2000) . IEEE Transactions on Electron Devices, 47(5), 1089-1097.
• Plimmer SA, Tan CH, David JPR, Grey R, Li KF & Rees GJ (1999) The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.
• Li KF, Plimmer SA, David JPR, Tozer RC, Rees GJ, Robson PN, Button CC & Clark JC (1999) Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication. IEEE PHOTONIC TECH L, 11(3), 364-366.
• Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1999) Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors. IEE P-OPTOELECTRON, 146(1), 21-24.
• David JPR, Khoo EA, Pabla AS, Woodhead J, Grey R & Rees GJ (1999) . Proceedings of SPIE - The International Society for Optical Engineering, 3896, 163-170.
• Dunn GM, Ghin R, Rees GJ, David JPR, Plimmer S & Herbert DC (1999) . Semiconductor Science and Technology, 14(11), 994-1000.
• Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1999) . IEE Proceedings: Optoelectronics, 146(1), 62-66.
• Khoo EA, Woodhead J, David JPR, Grey R & Rees GJ (1999) . Electronics Letters, 35(2), 150-152.
• Flimmer SA, David JPR, Ong DS & Li KF (1999) . IEEE Transactions on Electron Devices, 46(4), 769-775.
• Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1999) . Applied Physics Letters, 75(13), 1929-1931.
• Ghin R, David JPR, Plimmer SA, Hopkinson M, Rees GJ, Herbert DC & Wight DR (1998) Avalanche multiplication and breakdown in Ga0.52In0.48P diodes. IEEE T ELECTRON DEV, 45(10), 2096-2101.
• Li KF, Ong DS, David JPR, Rees GJ, Tozer RC, Robson PN & Grey R (1998) Avalanche multiplication noise characteristics in thin GaAs p(+)-i-n(+) diodes. IEEE T ELECTRON DEV, 45(10), 2102-2107.
• Flitcroft RM, David JPR, Houston PA & Button CC (1998) Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors. IEEE T ELECTRON DEV, 45(6), 1207-1212.
• Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1998) Low excess noise characteristics in thin avalanche region GaAs diodes. ELECTRON LETT, 34(1), 125-126.
• Ong DS, Li KF, Rees GJ, David JPR, Robson PN & Dunn GM (1998) . Applied Physics Letters, 72(2), 232-234.
• Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) . IEEE Transactions on Electron Devices, 45(8), 1804-1810.
• Roberts JS, David JPR, Smith L & Tihanyi PL (1998) . Journal of Crystal Growth, 195(1-4), 668-675.
• Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) InGaAs/GaAs piezoelectric lasers. Conference on Lasers and Electro-Optics Europe - Technical Digest, 95.
• Ong DS, Li KF, Rees GJ, David JPR & Robson PN (1998) . Journal of Applied Physics, 83(6), 3426-3428.
• Chia CK, David JPR, Rees GJ, Plimmer SA, Grey R & Robson PN (1998) . Journal of Applied Physics, 84(8), 4363-4369.
• Lye BC, Houston PA, Button CC & David JPR (1998) Electrical and optical characterisation of heavily doped GaAs : C bases of heterojunction bipolar transistors. SOLID STATE ELECTRON, 42(1), 115-120.
• Yow HK, Houston PA, Button CC, David JPR & Ng CMS (1998) Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors. J ELECTRON MATER, 27(1), 17-23.
• Lidzey DG, Bradley DDC, Pate MA, David JPR, Whittaker DM, Fisher TA & Skolnick MS (1997) Mapping the confined optical field in a microcavity via the emission from a conjugated polymer. APPL PHYS LETT, 71(6), 744-746.
• Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ & Robson PN (1997) Impact ionization coefficients in GaInP p-i-n diodes. APPL PHYS LETT, 70(26), 3567-3569.
• Wilson LR, Mowbray DJ, Skolnick MS, Astratov VN, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells. PHYS REV B, 55(24), 16045-16048.
• Valtueña JF, Izpura I, Sánchez-Rojas JL, Muñoz E, Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1997) . Microelectronics Journal, 28(8-10), 757-765.
• Dunn GM, Rees GJ & David JPR (1997) . Semiconductor Science and Technology, 12(9), 1147-1153.
• Dunn GM, Rees GJ & David JPR (1997) . Semiconductor Science and Technology, 12(6), 692-697.
• Plimmer SA, David JPR & Dunn GM (1997) . IEEE Transactions on Electron Devices, 44(4), 659-663.
• Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1997) . Electronics Letters, 33(11), 957-958.
• Dunn GM, Rees GJ & David JPR (1997) . Electronics Letters, 33(4), 337-339.
• Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) . IEEE Photonics Technology Letters, 9(2), 143-145.
• Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1997) . Journal of Crystal Growth, 170(1-4), 399-403.
• Dunn GM, Rees GJ & David JPR (1997) . Electronics Letters, 33(7), 639-640.
• Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) . Journal of Crystal Growth, 170(1-4), 394-398.
• David JPR, Ghin R, Plimmer SA, Hopkinson M & Allam J (1997) Breakdown characteristics of (AlxGa1-x)0.52In0.48P p-i-n diodes. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 256-260.
• Roberts JS, David JPR, Chen YH & Sale TE (1997) . Journal of Crystal Growth, 170(1-4), 621-625.
• Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1997) . Semiconductor Science and Technology, 12(1), 111-120.
• Chia CK, David JPR, Rees GJ, Robson PN, Plimmer SA & Grey R (1997) . Applied Physics Letters, 71(26), 3877-3879.
• Plimmer SA, David JPR, Rees GJ, Grey R, Herbert DC, Wight DR & Higgs AW (1997) . Journal of Applied Physics, 82(3), 1231-1235.
• Martin RW, McGow FJ, Hopkinson M & David JPR (1997) Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells. SUPERLATTICE MICROST, 22(4), 517-520.
• Wilson LR, Mowbray DJ, Skolnick MS, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in [111]GaInAs-GaAs piezo-electric quantum wells. SUPERLATTICE MICROST, 21(1), 113-118.
• Plimmer SA, David JPR, Herbert DC, Lee TW, Rees GJ, Houston PA, Grey R, Robson PN, Higgs AW & Wight DR (1996) Investigation of impact ionization in thin GaAs diodes. IEEE T ELECTRON DEV, 43(7), 1066-1072.
• Kowalski OP, Wegerer RM, Mowbray DJ, Skolnick MS, Button CC, Roberts JS, Hopkinson M, David JPR & Hill G (1996) Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
• David JPR, Sale TE, Pabla AS, RodriguezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN, Skolnick MS & Hogg RA (1996) Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures. APPL PHYS LETT, 68(6), 820-822.
• Chen YH, Wilkinson CI, Woodhead J, Button CC, David JPR, Pate MA & Robson PN (1996) . Electronics Letters, 32(6), 559-560.
• Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1996) . IEEE Photonics Technology Letters, 8(4), 473-475.
• Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1996) . IEEE Transactions on Electron Devices, 43(12), 2303-2305.
• Mazzer M, Grünbaum E, Barnham KWJ, Barnes J, Griffin PR, Holt DB, Hutchison JL, Norman AG, David JPR, Roberts JS & Grey R (1996) . Materials Science and Engineering B, 42(1-3), 43-51.
• Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1996) . Applied Physics Letters, 68(12), 1595-1597.
• Griffin PR, Barnes J, Barnham KWJ, Haarpaintner G, Mazzer M, Zanotti-Fregonara C, Grünbaum E, Olson C, Rohr C, David JPR , Roberts JS et al (1996) . Journal of Applied Physics, 80(10), 5815-5820.
• Kinder D, Nicholas RJ, Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G (1996) Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields. SEMICOND SCI TECH, 11(1), 34-38.
• Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP quantum well structures grown on [111]B InP. MICROELECTR J, 26(8), 805-810.
• Grey R, David JPR, Hill G, Pabla AS, Pate MA, Rees GJ, Robson PN, RodriguezGirones PJ, Sale TE, Woodhead J , Fisher TA et al (1995) Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices. MICROELECTR J, 26(8), 811-820.
• DAVID JPR, HOPKINSON M, STAVRINOU PN & HAYWOOD SK (1995) GROWTH OF INASXP1-X/INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. J APPL PHYS, 78(5), 3330-3334.
• Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1995) Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration. Applied Physics Letters, 1595.
• David JPR, Allam J, Adams AR, Roberts JS, Grey R, Rees GJ & Robson PN (1995) . Applied Physics Letters, 2876.
• Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 299-302.
• David JPR, Chen YH, Grey R, Hill G, Robson PN & Kightley P (1995) . Applied Physics Letters, 67, 906.
• ROBERTS JS & DAVID JPR (1994) HIGH-PURITY ALGAAS FROM METHYL-BASED PRECURSORS USING IN-SITU GETTERING OF ALKOXIDES. J CRYST GROWTH, 145(1-4), 968-969.
• SALE TE, WOODHEAD J, REES GJ, GREY R, DAVID JPR, PABLA AS, RODRIGUEZGIRONES PJ, ROBSON PN, HOGG RA & SKOLNICK MS (1994) CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS. J APPL PHYS, 76(9), 5447-5452.
• PABLA AS, HOPKINSON M, DAVID JPR, KHOO EA & REES GJ (1994) ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M. ELECTRON LETT, 30(20), 1707-1708.
• DAVID JPR, GREY R, REES GJ, PABLA AS, SALE TE, WOODHEAD J, SANCHEZROJAS JL, PATE MA, HILL G, ROBSON PN , HOGG RA et al (1994) GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES. J ELECTRON MATER, 23(9), 975-982.
• MOWBRAY DJ, KOWALSKI OP, HOPKINSON M, SKOLNICK MS & DAVID JPR (1994) ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
• DAVID JPR, HOPKINSON M & PATE MA (1994) AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS. ELECTRON LETT, 30(11), 907-909.
• MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, DELONG MC, HOPKINSON M, DAVID JPR & CULLIS AG (1994) SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
• WOODHEAD J, REDDY M & DAVID JPR (1994) ELECTROLUMINESCENCE FROM INGAAS/INALAS HEMTS. ELECTRON LETT, 30(14), 1181-1183.
• Dunstan DJ, Kidd P, Fewster PF, Andrew NL, Grey R, David JPR, González L, González Y, Sacedón A & González-Sanz F (1994) . Applied Physics Letters, 65(7), 839-841.
• Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Reddy M, Hill G & Sánchez-Dehesa J (1994) . Journal of Applied Physics, 76(10), 5931-5944.
• David JPR, Hopkinson M, Ghin R & Pate MA (1994) Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 403-406.
• Pabla AS, Woodhead J, Grey R, Rees GJ, David JPR, Pate MA & Robson PN (1994) . Electronics Letters, 30(18), 1521-1522.
• Roberts JS, David JPR, Sale TE & Tihanyi PL (1994) . Journal of Crystal Growth, 143(3-4), 135-140.
• MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, HOPKINSON M & DAVID JPR (1994) OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
• Hogg RA, Fisher TA, Willcox AR, Whittaker DM, Skolnick MS, Mowbray DJ, David JP, Pabla AS, Rees GJ, Grey R , Woodhead J et al (1993) . Phys Rev B Condens Matter, 48(11), 8491-8494.
• PABLA AS, SANCHEZROJAS JL, WOODHEAD J, GREY R, DAVID JPR, REES GJ, HILL G, PATE MA, ROBSON PN, HOGG RA , FISHER TA et al (1993) TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS. APPL PHYS LETT, 63(6), 752-754.
• DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, HOPKINSON M, DAVID JPR, TAYLOR PC, KURTZ SR & OLSON JM (1993) PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
• David JPR, Hopkinson M, Hill G, Stavrinou P & Haywood SK (1993) Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, 167-170.
• COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) DETERMINATION OF LOW-TEMPERATURE IMPACT IONIZATION COEFFICIENTS IN GAAS BY ELECTROLUMINESCENCE MEASUREMENTS ON SINGLE BARRIER TUNNELING STRUCTURES. APPL PHYS LETT, 61(7), 825-827.
• HOPKINSON M, DAVID JPR, CLAXTON PA & KIGHTLEY P (1992) GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 60(7), 841-843.
• Roberts JS, Sale TE, Button CC, David JPR & Jennings A (1992) . Journal of Crystal Growth, 124(1-4), 792-800.
• David JPR, Morley MJ, Wolstenholme AR, Grey R, Pate MA, Hill G, Rees GJ & Robson PN (1992) . Applied Physics Letters, 61(17), 2042-2044.
• Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Hill G & Castagné J (1992) . Applied Physics Letters, 61(10), 1225-1227.
• COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) IMPACT IONIZATION AND ELECTROLUMINESCENCE IN SINGLE BARRIER TUNNELING STRUCTURES. SUPERLATTICE MICROST, 12(4), 443-446.
• ROBERTS JS, SINGH KC, BUTTON CC, DAVID JPR & WOODHEAD J (1991) ALGAAS/GAAS P-MODFET MATERIALS GROWN USING INTRINSIC CARBON DOPING. JOURNAL OF CRYSTAL GROWTH, 107(1-4), 915-920.
• David JPR, Grey R, Pate MA, Claxton PA & Woodhead J (1991) . Journal of Electronic Materials, 20(4), 295-297.
• DAVID JPR, WOLSTENHOLME AR, CLAXTON PA, GREY R & WOODHEAD J (1990) LOW LEAKAGE INGAAS/GAAS STRAINED LAYER MQWPIN STRUCTURES. J ELECTRON MATER, 19(7), 56-56.
• Pickin W & David JPR (1990) . Applied Physics Letters, 56(3), 268-270.
• Woodhead J, Claxton PA, Grey R, Sale TE, David JPR, Liu L, Pate MA, Hill G & Robson PN (1990) . Electronics Letters, 26(25), 2117-2118.
• Roberts JS, Button CC, David JPR, Jones AC & Rushworth SA (1990) . Journal of Crystal Growth, 104(4), 857-860.
• PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. INST PHYS CONF SER(96), 397-400.
• Grey R, David JPR, Claxton PA, Gonzalez Sanz F & Woodhead J (1989) . Journal of Applied Physics, 66(2), 975-977.
• David JPR, Marsland JS & Roberts JS (1989) . IEEE Electron Device Letters, 10(7), 294-296.
• ROBERTS JS, PATE MA, MISTRY P, DAVID JPR, FRANKS RB, WHITEHEAD M & PARRY G (1988) MOVPE GROWN MQW PIN DIODES FOR ELECTRO-OPTIC MODULATORS AND PHOTODIODES WITH ENHANCED ELECTRON IONIZATION COEFFICIENT. J CRYST GROWTH, 93(1-4), 877-884.
• ROBERTS DA, DAVID JPR, HILL G, HOUSTON PA, PATE MA, ROBERTS JS & ROBSON PN (1988) GAAS/ALGAAS MULTIPLE QUANTUM WELL PIN DIODES GROWN BY SELECTIVE AREA EPITAXY. ELECTRON LETT, 24(14), 896-898.
• Woodhead J, Gonzalez Sanz F, Claxton PA & David JPR (1988) . Semiconductor Science and Technology, 3(6), 601-604.
• Li Kam Wa P, Robson PN, Roberts JS, Pate MA & David JPR (1988) . Applied Physics Letters, 52(24), 2013-2014.
• Pape IJ, Li Kam Wa PLK, David JPR, Claxton PA, Robson PN & Sykes D (1988) . Electronics Letters, 24(15), 910-911.
• Pape IJ, Wa PLK, David JPR, Claxton PA & Robson PN (1988) . Electronics Letters, 24(19), 1217-1218.
• WHITEHEAD M, PARRY G, ROBERTS JS, MISTRY P, WA PLKM & DAVID JPR (1987) QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS. ELECTRON LETT, 23(20), 1048-1050.
• CLAXTON PA, ROBERTS JS, DAVID JPR, SOTOMAYORTORRES CM, SKOLNICK MS, TAPSTER PR & NASH KJ (1987) GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE. J CRYST GROWTH, 81(1-4), 288-295.
• WA PLK, ROBSON PN, DAVID JPR, HILL G, MISTRY P, PATE MA & ROBERTS JS (1986) ALL-OPTICAL SWITCHING EFFECTS IN A PASSIVE GAAS/GAALAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE RESONATOR. ELECTRON LETT, 22(21), 1129-1130.
• Wa PLK, Robson PN, David JPR, Hill G, Mistry P, Pate MA & Roberts JS (1986) NONLINEAR PROPERTIES OF GaAs/GaAlAs MULTI-QUANTUM-WELL OPTICAL WAVEGUIDES.. IEE Colloquium (Digest)(1986 /128).
• Roberts JS, Claxton PA, David JPR & Marsh JH (1986) . Electronics Letters, 22(10), 506-507.
• DAVID JPR (1985) IONIZATION COEFFICIENT IN GAAS, DOPING DEPENDENCE. IEE PROC-I, 132(1), 47-47.
• David JPR, Marsland JS, Hall HY, Hill G, Mason NJ, Pate MA, Roberts JS, Robson PN, Sitch JE & Woods RC (1985) MEASURED IONIZATION COEFFICIENTS IN Ga//1// minus //xAl//xAs.. Institute of Physics Conference Series(74), 247-252.
• DAVID JPR, SITCH JE & STERN MS (1982) GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS. IEEE T ELECTRON DEV, 29(10), 1548-1552.
• Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S () . Communications Materials, 5(1).
• Campbell JC, David JPR & Bank SR () . Photonics, 10(7), 715-715.
• Harun F, Rusli JR, Richards RD, Abdul Rahman MG & David JPR () . Solid State Phenomena, 343, 99-104.
• Lee HJ, Gamel MMA, Ker PJ, Jamaludin MZ, Wong YH & David JPR () . Journal of Electronic Materials.
• Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS () Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors.

Chapters

• Gu Y, Richards RD, David JPR & Zhang Y (2019) , Bismuth-Containing Alloys and Nanostructures (pp. 299-318). Springer Singapore
• Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2018) , Microscopy of Semiconducting Materials 2003 (pp. 107-110).
• Finley JJ & David JPR (2005) , Encyclopedia of Modern Optics (pp. 358-363). Elsevier
• Allam J & David JPR (1996) , Hot Carriers in Semiconductors (pp. 343-346). Springer US
• Cullis AG & Midgley PA () CRC Press

Conference proceedings papers

• Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) . Optical Sensing and Detection VIII, 7 April 2024 - 12 April 2024.
• Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) . Infrared Technology and Applications L, 21 April 2024 - 26 April 2024.
• Liu Y, Jin X, Lee S, Jung H, Lewis H, Guo B, Kodati S, Schawrtz M, Gerin C, Ronningen TJ , Campbell J et al (2024) . Optical Components and Materials XXI, 27 January 2024 - 1 February 2024.
• Harun F, Richards RD & David JPR (2023) . 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 28 August 2023 - 30 August 2023.
• David JPR, Jin X, Lewis HIJ, Guo B, Lee S, Jung H, Kodati SH, Liang BL, Krishna S & Campbell JC (2022) . Emerging Imaging and Sensing Technologies for Security and Defence VII, 5 September 2022 - 8 September 2022.
• Harun F, Richards RD & David JP (2022) . 2022 IEEE 8th International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA), 26 September 2022 - 28 September 2022.
• Rockett TB, Adham NA, Carr M, David JPR & Richards RD (2022) . Biomedical Spectroscopy, Microscopy, and Imaging II, 3 April 2022 - 23 May 2022.
• Jin X, Guo B, Lewis H, Lee S, Liang B, Krishna S, Campbell J & David J (2022) . Optical Sensing and Detection VII, 3 April 2022 - 16 May 2022.
• Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) . Optical Components and Materials XIX (pp 19)
• Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) . Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 21 September 2020 - 25 September 2020.
• Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) . 2020 IEEE 8th International Conference on Photonics (ICP), 12 May 2020 - 30 June 2020.
• Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) . Optical Components and Materials XVII, 1 February 2020 - 6 February 2020.
• Mohmad AR & David JPK (2018) . 2018 IEEE International Conference on Semiconductor Electronics (ICSE), 15 August 2018 - 17 August 2018.
• Singh R, Pergoloni S, O'Farrell T, Scarano G, David J, Biagi M & IEEE (2018) . 2017 IEEE GLOBECOM WORKSHOPS (GC WKSHPS)
• Becker JJ, Xu X, Woods-Robinson R, Campbell CM, Lassise M, Ager J & Zhang Y-H (2017) . 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25 June 2017 - 30 June 2017.
• Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z & David J (2017) . Journal of Crystal Growth, Vol. 477(Proceeding of the 19th International Conference on Molecular Beam Epitaxy) (pp 139-143). Le Corum - Montepllier, France, 4 September 2016 - 9 September 2016.
• Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) . Advanced Photon Counting Techniques XI
• Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) . Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016.
• Richards RD, Harun F, Cheong JS, Mellor A, Hylton NP, Wilson T, Thomas T, Ekins-Daukes NJ & David JPR (2016) . 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5 June 2016 - 10 June 2016.
• Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) . 2016 IEEE 6th International Conference on Photonics (ICP), 14 March 2016 - 16 March 2016.
• Richards RD, Hunter CJ, Bastiman F, Mohmad AR & David JPR (2016) . IET Optoelectronics, Vol. 10(2) (pp 34-38)
• Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
• Mohmad AR, Majlis BY, Bastiman F, Richards RD & David JPR (2015) . 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 19 August 2015 - 21 August 2015.
• Singh R, O'Farrell T & David JPR (2015) . 2015 IEEE 26th Annual International Symposium on Personal, Indoor, and Mobile Radio Communications (PIMRC), 30 August 2015 - 2 September 2015.
• Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) . Asia Communications and Photonics Conference 2015, 2015.
• Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) . Unmanned/Unattended Sensors and Sensor Networks XI; and Advanced Free-Space Optical Communication Techniques and Applications
• Singh R, O'Farrell T & David JPR (2015) . 2015 IEEE 81st Vehicular Technology Conference (VTC Spring), 11 May 2015 - 14 May 2015.
• Auckloo A, Tozer R, David J & Tan CH (2014) . 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 7 December 2014 - 10 December 2014.
• Hossain MM, Zarkesh-Ha P, David JPR & Hayat MM (2014) . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
• Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
• Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
• Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) . 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 27 August 2014 - 29 August 2014.
• Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) . Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
• Singh R, O'Farrell T & David J (2013) Performance evaluation of IEEE 802.15.7 CSK physical layer. Globecom Workshops (GC Wkshps), 2013 IEEE
• Ker PJ, Tan CH & David JPR (2013) . 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80)
• Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
• Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
• Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) . IEEE Photonics Conference 2012, 23 September 2012 - 27 September 2012.
• Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) . Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221)
• Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8256
• Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) . IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
• Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) . IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
• Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) . IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
• Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) . IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
• Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) . IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
• Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) . IEEE Photonic Society 24th Annual Meeting, 9 October 2011 - 13 October 2011.
• Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
• Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) . 2010 Photonics Global Conference, PGC 2010
• Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) . 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707)
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) . INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
• Hayat MM, Ong DSG, David JPR & Ng JS (2010) . 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 126-127)
• Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838
• Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
• Ng JS, Tan CH & David JPR (2010) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
• Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
• Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412)
• Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7726
• Green JE, Loh WS, David JPR, Tozer RC, Soloviev SI & Sandvik PM (2010) . SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol. 645-648 (pp 1081-1084)
• Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
• David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
• Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
• Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
• Chee HT, Marshall A, Steer MJ & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7355
• Ng JS, Tan CH & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
• Marshall ARJ, Tan CH & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
• Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234)
• Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
• Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314)
• Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210)
• David JPR (2008) . 2008 IEEE International Conference on Semiconductor Electronics, 25 November 2008 - 27 November 2008.
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297)
• Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
• Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322)
• Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
• Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
• Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
• Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
• Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
• Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
• Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
• Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342)
• Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
• Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
• Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
• Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
• Ng JS, Tan CH & David JPR (2006) . IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
• Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics InfoBase Conference Papers
• Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
• Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
• Aivaliotis P, Zibik E, Wilson LR, David JPR, Hopkinson M & Groves C (2006) . Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110)
• Liu HY, Sellers IR, Gutierrez M, Groom KM, Beanland R, Soong WM, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ & Skolnick MS (2005) . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
• David JPR (2005) Low noise avalanche photodiodes. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) (pp 368-369)
• Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
• Navaretti P, Liu H, Hopkinson M, Gutierrez M, David JPR, Hill G, Herrera M, Gonzalez D & Garcia R (2004) . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
• Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
• Ng JS, Tan CH & David JPR (2004) . JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
• Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) . Device Research Conference - Conference Digest, DRC (pp 79-80)
• Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2004) Avalanche multiplication and breakdown in 4H-SiC diodes. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, Vol. 457-460 (pp 1069-1072)
• David JPR (2003) Physics & design of low noise avalanche photodiodes. CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 (pp 99-99)
• David JPR (2003) Physics and design of low noise avalanche photodiodes - LEOS distinguished lecture 2003-2004. ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS (pp 170-170)
• Rees G & David J (2003) Lonisation dead space and the super-APD. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 995-996)
• Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266)
• Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) High gain, low noise 4H-SiC UV avalanche photodiodes. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 355-358)
• Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270)
• Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
• David J (2003) Low Noise Avalanche Photodiodes. Optics InfoBase Conference Papers (pp 19-20)
• Groves C, Ghin R, Harrison CN, David JPR & Rees GJ (2002) Temperature dependence of avalanche multiplication in GaAs. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 226-230)
• Yee M, Ng WK, David JPR & Houston PA (2002) Temperature dependence of In0.53Ga0.47As ionisation coefficients. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 316-320)
• Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) . IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
• Fry PW, Mowbray DJ, Itskevich IE, Skolnick MS, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG & Hill G (2001) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
• Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 131-136)
• Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9)
• Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
• Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518)
• Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker JA, O'Reilly EP, Wilson LR, Maksym PA, Hopkinson M, Al-Khafaji M , David JPR et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
• Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3953 (pp 95-102)
• Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
• Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
• Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
• David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
• Fry PW, Itskevich IE, Mowbray DJ, Sholnick MS, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M , Al-Khafaji M et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
• Chia CK, David JPR, Rees GJ, Plimmer SA & Grey R (1999) . Design, Fabrication, and Characterization of Photonic Devices
• Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 230-235)
• Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 295-298)
• Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) Monte Carlo estimation of excess noise factor in thin p(+)-i-n(+) avalanche photodiodes. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 631-634)
• Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low noise avalanche photodetectors. Conference on Lasers and Electro-Optics Europe - Technical Digest (pp 383)
• Chia CK, David JPR, Rees GJ, Plimmer SA, Hopkinson M, Grey R & Robson PN (1998) Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394)
• Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 435-438)
• Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 435-438)
• Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) . Conference on Lasers and Electro-Optics-Europe, 1998.
• Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) . Conference on Lasers and Electro-Optics-Europe, 1998.
• Sale TE, Roberts JS, David JPR, Grey R & Robson PN (1997) . Fabrication, Testing, and Reliability of Semiconductor Lasers II
• Hopkinson M & David JPR (1997) Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038)
• Ghin R, Dunn GM, Plimmer SA, David JPR, Rees GJ & Herbert DC (1997) Monte Carlo modelling of impact ionisation in GaAs. COMPOUND SEMICONDUCTORS 1996(155) (pp 629-632)
• Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionization effects in MSM photodetectors and MESFET's.. COMPOUND SEMICONDUCTORS 1996(155) (pp 659-662)
• Sale TE, Roberts JS, David JPR, Grey R, Woodhead J & Robson PN (1997) . Vertical-Cavity Surface-Emitting Lasers
• Martin RW, McGow F, Hopkinson M & David JPR (1997) All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542)
• Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ, Robson PN, Herbert DC, Higgs AW & Wight DR (1997) Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588)
• Mowbray DJ, Kowalski OP, Cockburn JW, Skolnick MS, Hopkinson M & David JPR (1997) Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
• Li KF, Ong DS, David JPR, Robson PN, Tozer RC, Rees GJ & Grey R (1997) Avalanche photodiode (APD) noise dependence on avalanche region width. 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997 (pp 170-171)
• Flitcroft RM, Houston PA, Lye BC, Button CC & David JPR (1997) Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors. EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 273-278)
• David JPR, Ghin R, Hopkinson M, Pate MA & Robson PN (1996) Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574)
• David JPR, Ghin R, Plimmer SA, Hopkinson M & Allan J (1996) Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260)
• Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1996) Electron and hole multiplication characteristics in short GaAs PINs. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 563-568)
• Plimmer SA, David JPR, Herbert DC, Rees GJ, Houston PA, Robson PN, Grey R, Pate MA, Higgs AW & Wight DR (1996) Multiplication characteristics of thin AlxGa1-xAs (x=0 to 0.3) diodes. 1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST (pp 44-45)
• David JPR, Sale TE, Pabla AS, RodriquezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN & Skolnick MS (1995) Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 42-46)
• Chen YH, Woodhead J, David JPR, Button CC, Hopkinson M, Roberts JS, Sale TE & Robson PN (1995) Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16)
• Martin RW, McGow F, Hopkinson M & David JPR (1995) Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612)
• HOPKINSON M, DAVID JPR, KHOO EA, PABLA AS, WOODHEAD J & REES GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302)
• Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1995) Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes. 1995 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (EDMO) (pp 64-69)
• FISHER TA, HOGG RA, WILLCOX ARK, WHITTAKER DM, SKOLNICK MS, MOWBRAY DJ, DAVID JPR, PABLA AS, REES GJ, GREY R , SANCHEZROJAS JL et al (1994) SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648)
• Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) . Integrated Photonics Research, 1994.
• DAVID JPR, KIGHTLEY P, CHEN YH, GOH TS, GREY R, HILL G & ROBSON PN (1994) LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 373-378)
• DAVID JPR, ALLAM J, ROBERTS JS, GREY R, REES G & ROBSON PN (1994) AVALANCHE BREAKDOWN IN GAAS/ALXGA1-XAS MULTILAYERS AND ALLOYS. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 721-726)
• SANCHEZROJAS JL, MUNOZ E, PABLA AS, DAVID JPR, REES GJ, WOODHEAD J & ROBSON PN (1994) OPTOELECTRONIC EFFECTS AND FIELD DISTRIBUTION IN STRAINED (111)B INGAAS/ALGAAS MQW PIN DIODES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 331-336)
• DAVID JPR, HOPKINSON M, GHIN R & PATE MA (1994) REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406)
• HOPKINSON M, DAVID JPR, KOWALSKI OP, MOWBRAY DJ & SKOLNICK MS (1994) GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
• Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Optics InfoBase Conference Papers (pp 260-262)
• AARDVARK A, ALLOGHO GG, BOUGNOT G, DAVID JPR, GIANI A, HAYWOOD SK, HILL G, KLIPSTEIN PC, MANSOOR F, MASON NJ , NICHOLAS RJ et al (1993) DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 8(1) (pp S380-S385)
• CLAXTON PA, HOPKINSON M, KOVAC J, HILL G, PATE MA & DAVID JPR (1991) QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083)
• PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 (pp 397-400)
• Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () (pp 339-342)
• David JPR () . Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715)
• David JPR, Ghin R, Plimmer SA, Rees GJ & Grey R () . HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)
• Farley RJ, Haywood SK, Hewer VA, Hogg JHC, Stavrinou PN, Hopkinson M, David JPR & Pate M () . Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
• Guy P, Farley RJ, Haywood SK, Hewer VA, Hogg JHC, David JPR, Hopkinson M & Pate M () . Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
• Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G () . Seventh International Conference on Indium Phosphide and Related Materials
• Stavrinou P, Haywood SK, Hart L, Zhang X, Hopkinson M, David JPR & Hill G () . 1993 (5th) International Conference on Indium Phosphide and Related Materials
• Stavrinou P, Haywood SK, Zhang X, Hopkinson M, Claxton PA, David JPR & Hill G () . LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
• Hopkinson M, Claxton PA, David JPR, Hill G, Reddy M & Pate MA () . [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

Preprints

• Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S (2024) , arXiv.
• Singh R, O'Farrell T, Bui TC, Biagi M & David JPR (2019) Performance Evaluation of Frequency Domain Equalisation Based Colour Shift Keying Modulation Schemes Over Diffuse Optical Wireless Channels, arXiv.
• Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors, arXiv.
• Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector, arXiv.
• Gamel M, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David J & Jamaludin MZ () , Research Square Platform LLC.