TY - JOUR T1 - Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures JO - Journal of Materials Science: Materials in Electronics UR - http://dx.doi.org/10.1007/s10854-023-09839-0 PY - 2023/02/11 AU - Batool Z AU - Hild K AU - Marko I AU - Mohmad AR AU - David JPR AU - Lu X AU - Tiedje T AU - Sweeney SJ ED - DO - DOI: 10.1007/s10854-023-09839-0 PB - Springer Science and Business Media LLC VL - 34 IS - 6 Y2 - 2024/12/22 ER -