@article{article, title  = {{Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors}},

 url = {{}},

 year = {{1998}},

 month = {{1}},

 author = {{Yow HK and Houston PA and Button CC and David JPR and Ng CMS}},

 volume = {{27}},

 journal = {{J ELECTRON MATER}},

 issue = {{1}},

 pages = {{17-23}},

 note = {{Accessed on 2024/12/22}}}