TY  - JOUR

T1  - InAs Diodes Fabricated Using Be Ion Implantation

JO  - IEEE Transactions on Electron Devices

UR  - http://eprints.whiterose.ac.uk/90991/

PY  - 2015/09/01

AU  - White BS

AU  - Sandall IC

AU  - David JPR

AU  - Chee Hing Tan

ED  - 

DO  - DOI: 10.1109/ted.2015.2456434

PB  - Institute of Electrical and Electronics Engineers (IEEE)

VL  - 62

IS  - 9

SP  - 2928

EP  - 2932

Y2  - 2024/12/22

ER  -