TY  - JOUR

T1  - Electrical and optical characterisation of heavily doped GaAs : C bases of heterojunction bipolar transistors

JO  - SOLID STATE ELECTRON

PY  - 1998/01/01

AU  - Lye BC

AU  - Houston PA

AU  - Button CC

AU  - David JPR

ED  - 

VL  - 42

IS  - 1

SP  - 115

EP  - 120

Y2  - 2024/12/22

ER  -