TY - CONF
T1 - OPTOELECTRONIC EFFECTS AND FIELD DISTRIBUTION IN STRAINED (111)B INGAAS/ALGAAS MQW PIN DIODES
JO - GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993
PY - 1994/01/01
AU - SANCHEZROJAS JL
AU - MUNOZ E
AU - PABLA AS
AU - DAVID JPR
AU - REES GJ
AU - WOODHEAD J
AU - ROBSON PN
ED - Rupprecht HS
ED - Weimann G
VL - 136
IS - 136
SP - 331
EP - 336
Y2 - 2025/01/06
ER -