TY  - JOUR

T1  - Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

JO  - IEEE T ELECTRON DEV

UR  - http://eprints.whiterose.ac.uk/896/

PY  - 2003/10/01

AU  - Yee M

AU  - Ng WK

AU  - David JPR

AU  - Houston PA

AU  - Tan CH

AU  - Krysa A

ED  - 

DO  - DOI: 10.1109/TED.2003.816553

VL  - 50

IS  - 10

SP  - 2021

EP  - 2026

Y2  - 2024/12/22

ER  -