Dr Robert Airey
BSc, MSc, PhD
School of Electrical and Electronic Engineering
Research Associate
Research Associate responsible for device processing, within the UK Engineering and Physical Science Research Council National Epitaxy Facility.
+44 114 222 5820
Full contact details
School of Electrical and Electronic Engineering
George Porter Building
Wheeldon Street
91Ö±²¥
S3 7HQ
- Profile
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B.Sc., 1988, Physical Electronics, University of Bradford. M.Sc., 1989, Medical Electronics, University of London. Ph.D., 1995, Physics, University of Cranfield for the thesis "Second-Harmonic generation in Langmuir-Blodgett films." Medical Physicist, Freeman Hospital, Newcastle upon Tyne. 1989-1991, Research into the effect prostate removal has on bladder control. Teaching Company Associate, University of Lancaster and Oxley Developments. 1995-1997, Development of microstructures using deep X-ray lithography. Research Assistant, Department of Electronic Engineering, University of 91Ö±²¥. 1997-1998, Fabrication and chracterisation of Vertical Cavity Surface Emitting Lasers (VCSELs). Research Associate, Department of Physics, University of 91Ö±²¥ and the Medical Physics department at the Weston Park Hospital, 91Ö±²¥. 1998-2000, Development of CVD diamond as a radiation detector for use in radiotherapy.
- Publications
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Journal articles
- . Journal of Physics: Condensed Matter, 27(27).
- . Journal of Applied Physics, 115(16), 163105-163105.
- . Journal of Physics D: Applied Physics, 46(26), 264007-264007.
- . Applied Physics Letters, 101(25).
- . Nanoscale Res Lett, 7(1), 592-592.
- . Semiconductor Science and Technology, 27(1).
- . Thin Solid Films, 520(7), 3064-3070.
- . Physica B: Condensed Matter, 407(15), 2960-2963.
- . Optical and Quantum Electronics, 42(9-10), 619-629.
- . IEEE J SEL TOP QUANT, 17(5), 1334-1342.
- . Applied Physics Letters, 99(5), 051101-051101.
- . Japanese Journal of Applied Physics, 50(4S), 04DG10-04DG10.
- . JPN J APPL PHYS, 50(4).
- . NANOSCALE RES LETT, 6.
- . Electronics Letters, 47(1), 44-44.
- Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films.
- . Applied Physics Letters, 99(23).
- Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells. IEEE Journal of Photovoltaics.
- Characterisation of defects in p-GaN by admittance spectroscopy. Physica B: Condensed Matter.
- Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers. IEEE Journal on Selected Topics in Quantum Electronics.
- . Journal of Physics: Conference Series, 245, 012083-012083.
- . PHYS REV B, 81(3).
- . IEEE Photonics Technology Letters, 21(14), 966-968.
- . Journal of Electronic Materials, 38(5), 635-639.
- . Phys Rev Lett, 101(22), 226807.
- . J PHYS D APPL PHYS, 41(9).
- . J PHYS D APPL PHYS, 41(9).
- . APPL PHYS LETT, 92(14).
- . J APPL PHYS, 102(11).
- . Applied Physics Letters, 91(14), 142104-142104.
- . APPL PHYS LETT, 91(14).
- . APPL PHYS LETT, 91(5).
- . Journal of Applied Physics, 101(9), 093110-093110.
- . APPL PHYS LETT, 90(15).
- . APPL PHYS LETT, 90(2).
- Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
- InGaAs-AlAsSb quantum cascade lasers: Towards 3 μm emission. Optics InfoBase Conference Papers.
- . APPL PHYS LETT, 89(8).
- . Electronics Letters, 42(16), 923-923.
- . APPL PHYS LETT, 88(13).
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- . J APPL PHYS, 98(8).
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- . APPL PHYS LETT, 85(18), 3992-3994.
- InGaAs-AlAsSb quantum cascade structures emitting at 3.1 mu m. ELECTRON LETT, 40(14), 874-875.
- . APPL PHYS LETT, 84(9), 1447-1449.
- . J APPL PHYS, 94(4), 2631-2637.
- . APPL PHYS LETT, 82(24), 4221-4223.
- Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates. J ELECTRON MATER, 32(5), 350-354.
- Tuneable optoelectronic bandpass filtering using a simple self-pulsating two-section laser. OPT EXPRESS, 11(2), 151-157.
- . IEEE T ELECTRON DEV, 49(12), 2349-2351.
- . ELECTRON LETT, 38(24), 1539-1541.
- . APPL PHYS LETT, 80(20), 3769-3771.
- Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors. J PHYS D APPL PHYS, 35(7), 595-598.
- . Applied Physics Letters, 80(20), 3769-3771.
- . Physical Review B, 88(24).
- . New Journal of Physics, 15(8), 083027-083027.
- . Physical Review B, 75(15).
- . Physical Review B, 75(11).
- . Physical Review B, 74(19).
Conference proceedings papers
- . 2019 24th Microoptics Conference (MOC), 17 November 2019 - 20 November 2019.
- . 2013 Saudi International Electronics, Communications and Photonics Conference, 27 April 2013 - 30 April 2013.
- . 2011 37th IEEE Photovoltaic Specialists Conference, 19 June 2011 - 24 June 2011.
- . IET Optoelectronics, Vol. 5(3) (pp 100-104)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7953
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247(7) (pp 1761-1763)
- . 2010 Photonics Global Conference, 14 December 2010 - 16 December 2010.
- . 22nd IEEE International Semiconductor Laser Conference, 26 September 2010 - 30 September 2010.
- . JOURNAL OF CRYSTAL GROWTH, Vol. 311(10) (pp 2857-2859)
- . Physica E: Low-dimensional Systems and Nanostructures, Vol. 40(5) (pp 1200-1201)
- . 2008 33rd IEEE Photovolatic Specialists Conference, 11 May 2008 - 16 May 2008.
- Short-wavelength quantum cascade lasers - art. no. 69090V. NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, Vol. 6909 (pp V9090-V9090)
- . JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 689-694)
- . AIP Conference Proceedings
- . 2007 Conference on Lasers and Electro-Optics (CLEO), 6 May 2007 - 11 May 2007.
- InGaAs-AlAsSb Quantum Cascade Lasers: Towards 3 mu m Emission. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 492-493)
- Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 705-706)
- . Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 1, Vol. 4(1) (pp 120-124)
- . 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 7 May 2006 - 12 May 2006.
- . Semiconductor Lasers and Laser Dynamics II
- . Optical Methods in the Life Sciences, Vol. 6386 (pp U86-U93)
- InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 mu m. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 248-250)
- InGaAs-AlAsSb-InP quantum cascade lasers: Performance and prospects. 2005 International Conference on Indium Phosphide and Related Materials (pp 76-77)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 23(3-4) (pp 309-314)
- Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors. JOURNAL OF ELECTRONIC MATERIALS, Vol. 33(5) (pp 400-407)
- . Physica E: Low-dimensional Systems and Nanostructures, Vol. 21(2-4) (pp 863-866)
- The effect of dielectric stress on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 130-135)
- . International Conference on Molecular Bean Epitaxy
- Professional activities and memberships
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- Chemical Vapour Deposition Epitaxy - Characterisation of CVD diamond using the thermally stimulated current technique. The development of an in-shoe sensor to measure the shear forces exerted on the foot whilst walking, with the aim to predict and identify areas on the sole of the foot that are likely to ulcerate.