TY  - JOUR

T1  - Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

JO  - J ELECTRON MATER

PY  - 2003/05/01

AU  - Tan WS

AU  - Houston PA

AU  - Hill G

AU  - Airey RJ

AU  - Parbook PJ

ED  - 

VL  - 32

IS  - 5

SP  - 350

EP  - 354

Y2  - 2024/12/22

ER  -