@inproceedings{inproceedings, title  = {{Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors}},

 url = {{}},

 year = {{2004}},

 month = {{5}},

 author = {{Tan WS and Houston PA and Hill G and Airey RJ and Parbook PJ}},

 volume = {{33}},

 journal = {{JOURNAL OF ELECTRONIC MATERIALS}},

 issue = {{5}},

 pages = {{400-407}},

 note = {{Accessed on 2024/12/22}}}