TY  - CONF

T1  - Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

JO  - JOURNAL OF ELECTRONIC MATERIALS

PY  - 2004/05/01

AU  - Tan WS

AU  - Houston PA

AU  - Hill G

AU  - Airey RJ

AU  - Parbook PJ

ED  - 

VL  - 33

IS  - 5

SP  - 400

EP  - 407

Y2  - 2024/12/22

ER  -