GaN Centre team
Academic staff
Research interests:
- MOCVD growth of III-nitride materials and devices
- Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
- III-nitride based solid-state lighting
- Application of plasmonics in III-nitride optoelectronics
- Application of photonics crystal in III-nitride optoelectronics
- III-nitride Solar Cell
- III-nitride optoelectronics for hydrogen generation
Research Interests:
Focused on GaN related materials and devices, particularly optoelectronics.
- Hybrid organic/inorganic optoelectronics
- Non-radiative energy transfer processes in hybrid GaN/organic interfaces
- High efficiency semi-polar GaN based materials, LEDs and LD structures
- Optical characterization techniques of III-nitride materials and devices
Visiting academics
- Dr Yu Lu
-
Anhui University of Technology
Research interests:
- III-nitride based LED and LD
- HVPE growth of GaN substrate
- Dr Qiang Wang
-
Qilu University of Technology
Research interests:
- nano/micro fabrication and characterisation of III-nitride based LED
- Professor Pallab Bhattacharya
- Dr Jayanta Sarma
Research staff
- Dr Jie Bai
-
Ph.D, University of Tokushima, Japan
Research Interests:
- Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
- III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
- High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
- Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.
- Dr Suneal Ghataora
-
PhD in Electronic and Electrical Engineering, University of 91Ö±²¥, UK, 2019
B.Eng. Electronic and Electrical Engineering, 91Ö±²¥
Research interests:
- Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices
- Dr Xiangyu He
-
PhD in Physics, University of Strathclyde 2021
MSc in Science, University of Strathclyde
Research interests:
- Fabrication and characterization of III-Nitride micro light emitting opto-electronic devices
- Dr Kai Huang
-
PhD in Microelectronics and Solid State Electronics, Nanjing University, China, 2007
BSc in Microelectronics, Nanjing University, China, 2002Research interests:
- AlGaN based deep UV optoelectronics
- plasmonics in III-nitride optoelectronics
- Dr Sheng Jiang
-
PhD in Electronic and Electrical Engineering, the University of 91Ö±²¥, UK, 2018
MSc in Electronic and Electrical Engineering, the University of 91Ö±²¥, UK, 2013
BEng in Automatic Control and Electrical Systems Engineering, East China University of Science and Technology (ECUST), Shanghai, China, 2011Research interests:
- GaN based high-voltage high-frequency transistors for power switching applications
- GaN based integrated circuits and systems
- Dr Nicolas Poyiatzis
-
PhD in Electronic and Electrical Engineering, University of 91Ö±²¥, 2020
MEng Electrical Engineering, 91Ö±²¥Research interests:
- Fabrication and characterization of semi-polar III-Nitride based opto-electronics
Support staff
- Stephen Atkin
- Katherine Greenacre
PhD students
- Mr Philippe Roosvelt Bantsi
-
MSc Electronic Engineering, Bangor University, UK, 2017
BEng Electronic Engineering, Bangor University, UK, 2016Research interests:
- fabrication and characterisation of hybrid organic and inorganic III Nitride based opto-electronic devices (LED and LASER)
- transfer printing technique for hybrid device fabrication
- non-radiative energy transfer processes for opto-electronic devices
- Mr Si Chen
-
MEng, Electronic and Electrical Engineering, the University of 91Ö±²¥, UK
Research interests:
- GaN based hybrid microcavity light emitting devices
- fabrication and characterization of GaAs based photonic devices
- Mr Xinchi Chen
-
MSc in Electronic and Electrical Engineering, University of 91Ö±²¥, UK, 2019
BEng in Electronic Engineering, University of Huddersfield, UK, 2018
BEng in Electronic and Information Engineering, Beijing University of Aeronautics and Astronautics (BUAA), Beijing, China, 2017Research Interests:
- Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays
- Mr William Cripps
-
MSci Experimental Physics, Royal Holloway, University of London, UK
MSc Compound Semiconductor Physics, Cardiff University, UKResearch interests:
- deterministic nanoscale transfer printing of compound semiconductor nanowires
- Mr Volkan Esendag
-
MEng Electronics and Nanotechnology, University of Leeds
Research interests:
- Monolithic Integration of Group III-Nitrides on a Si Substrate
- Electronic Characterisation of Micro-LEDs
- Non-polar III-Nitride Power Devices on Sapphire
- High-Breakdown, Low Screw Dislocation High Electron Mobility Transistor Structures
- Mr Peng Feng
-
BSc, Applied Physics, Qingdao University of Technology
MSc, Semiconductor Photonics and Electronics, University of 91Ö±²¥Research interests:
- Growth and characterisation of monolithically integrated III-nitride micro-LED arrays.
- Mr Peter Fletcher
-
Research interests:
- Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
- Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach
- Mr Jack Haggar
-
Research interests:
- Fabrication and characterisation of III-Nitride photonics and electronics for visible light wireless communications.
- Mr Zhiheng Lin
-
MSc, Semiconductor Photonics and Electronics, University of 91Ö±²¥
Research Interests:
- Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays
- Mr Guillem MartÃnez de Arriba
-
Bsc Electronic Engineering for Telecommunications, Autonomous University of Barcelona (UAB), Spain
Msc Electronic and Electrical Engineering, 91Ö±²¥Research Interests:
- III nitrides materials for HEMT and Microdisk laser devices
- Miss Rongzi Ni
-
BSc, Electronic Science and Technology, Yanshan University (YSU), China
MSc, Semiconductor Photonics and Electronics, 91Ö±²¥, UKResearch interests:
- Monolithic integration of III-nitride micro-emitters
- Mr Ye Tian
-
B.Sc, Electrical Engineering, University of Liverpool
MSc, Semiconductor Photonics and Engineering, University of 91Ö±²¥Research interests:
The growth of nitrogen-polar III-nitride based materials by MOCVD. Investigation of nitrogen-polar nano-membranes using conductive etching approach.
- Mr Valerio Trinito
-
Bsc Electronic Engineering, Sapienza - University of Rome, Italy
Msc Nanotechnologies for ICTs, Polytechnic of Turin, ItalyResearch interests:
- Matlab Modelling
- Opto-Electronic Devices Simulations
- III-V Materials Applied to Solar Cells and LEDs
- Measurement and Characterization of Opto-Electronic Devices
- Mr Ce Xu
-
BSc, Electronic and Electrical Engineering , University of Greenwich
MSc, Electronic and Electrical Engineering, University of 91Ö±²¥Research interests:
- Growth and characterisation of monolithically integrated III-nitride micro-LED
- Mr Xuefei Yang
-
MSc in Electronics and Electrical Engineering, the University of 91Ö±²¥, UK, 2018
BEng in Electronic and Electrical Engineering, University of ZhengZhou(ZZU), ZhengZhou, China, 2016Research interests:
- superluminescent Light Emitting Diode with Quantum Dots fabricated by Transfer printing and simulated by FDTD
- Mr Xuanming Zhao
-
Msc Graduate, the University of 91Ö±²¥, UK, 2015
Research interests:
- growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.
- Mr Wei Zhong
-
BEng, Opto-electronic Engineering, Shenzhen University
MSc, Semiconductor Photonics and Electronics, University of 91Ö±²¥Research interests:
- Growth and fabrication of III-nitride micro-LED based micro-display
- Mr Yilun Zhou
-
MSc, Semiconductor Photonics and Electronics, the University of 91Ö±²¥, UK
Research interests:
- growth and characterisation of III-nitride material by sputtering deposition
- Mr Chenqi Zhu
-
B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
MSc, Electronic and Electrical Engineering, University of 91Ö±²¥Research interests:
- Monolithic Integration and growth of Group III-Nitrides on Si Substrate
