Recently published in ACS Photonics, 鈥淎 Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (渭LEDs)鈥 demonstrates a completely different approach which allows us to achieve 渭LEDs with a dimension of down to 3.6 渭m and an interpitch of down to 2 渭m.
The invention is based on an overgrowth on prepatterned templates with SiO2 microhole arrays, thus eliminating all the drawbacks of the conventional 渭LED fabrication approaches.
As a result, a record peak EQE of 6% at 鈭515 nm in the green spectral regions has been achieved on our 渭LED array bare chips. A high luminance of >107 cd/m2 has been obtained. Temperature-dependent measurements show an internal quantum efficiency of 28% for our 渭LED array structure.
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