TY - JOUR T1 - Temperature-induced carrier escape processes studied in absorption of individualInxGa1−xAsquantum dots JO - Physical Review B PY - 2004/04/01 AU - Oulton R AU - Tartakovskii AI AU - Ebbens A AU - Cahill J AU - Finley JJ AU - Mowbray DJ AU - Skolnick MS AU - Hopkinson M ED - DO - DOI: 10.1103/physrevb.69.155323 PB - American Physical Society (APS) VL - 69 IS - 15 Y2 - 2024/12/22 ER -