TY  - JOUR

T1  - Interactions of indium, arsenic and carbon in silicon using the pseudopotential technique

JO  - SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY

PY  - 2011/03/17

AU  - Shishkin M

AU  - Yan A

AU  - De Souza MM

ED  - 

VL  - 810

SP  - 333

EP  - 338

Y2  - 2024/10/18

ER  -