TY  - CONF

T1  - Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor

JO  - IEE Proceedings - Circuits, Devices and Systems

PY  - 2001/04/01

AU  - Spulber O

AU  - De Souza MM

AU  - Sweet M

AU  - Subhas Chandra Bose JV

AU  - Sankara Narayanan EM

ED  - 

DO  - DOI: 10.1049/ip-cds:20010294

PB  - Institution of Engineering and Technology (IET)

VL  - 148

IS  - 2

SP  - 79

EP  - 79

Y2  - 2024/10/18

ER  -