TY  - CHAP

T1  - Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures

T2  - Microscopy of Semiconducting Materials 2003

PY  - 2018/01/01

AU  - Norris DJ

AU  - Cullis AG

AU  - Olsen SH

AU  - O’Neill AG

AU  - Zhang J

ED  - 

DO  - DOI: 10.1201/9781351074636

SN  - 9781315895536

SP  - 389

EP  - 392

Y2  - 2024/12/22

ER  -