TY - JOUR T1 - Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs JO - IEEE Transactions on Power Electronics PY - 2022/08/11 AU - Naghibi J AU - Mohsenzade S AU - Mehran K AU - Foster MP ED - DO - DOI: 10.1109/tpel.2022.3198291 PB - Institute of Electrical and Electronics Engineers (IEEE) VL - 38 IS - 1 SP - 1079 EP - 1091 Y2 - 2025/05/09 ER -