TY  - JOUR

T1  - Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

JO  - J APPL PHYS

PY  - 2005/01/01

AU  - Bollet F

AU  - Gillin WP

AU  - Hopkinson M

AU  - Gwilliam R

ED  - 

DO  - DOI: 10.1063/1.1825613

VL  - 97

IS  - 1

Y2  - 2024/12/22

ER  -