TY  - JOUR

T1  - Breakdown characteristics of (Al<inf>x</inf>Ga<inf>1-x</inf>)<inf>0.52</inf>In<inf>0.48</inf>P p-i-n diodes

JO  - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PY  - 1997/01/01

AU  - David JPR

AU  - Ghin R

AU  - Plimmer SA

AU  - Hopkinson M

AU  - Allam J

ED  - 

SP  - 256

EP  - 260

Y2  - 2024/10/18

ER  -