TY - JOUR T1 - InAs Diodes Fabricated Using Be Ion Implantation JO - IEEE Transactions on Electron Devices UR - http://eprints.whiterose.ac.uk/90991/ PY - 2015/09/01 AU - White BS AU - Sandall IC AU - David JPR AU - Chee Hing Tan ED - DO - DOI: 10.1109/ted.2015.2456434 PB - Institute of Electrical and Electronics Engineers (IEEE) VL - 62 IS - 9 SP - 2928 EP - 2932 Y2 - 2025/05/09 ER -