TY - JOUR T1 - Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots JO - APPL PHYS LETT PY - 2009/09/07 AU - Davies SC AU - Mowbray DJ AU - Wang Q AU - Ranalli F AU - Wang T ED - DO - DOI: 10.1063/1.3224897 VL - 95 IS - 10 Y2 - 2025/05/03 ER -