TY  - JOUR

T1  - MBE-GROWN (GAIN)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXHIBITING CURRENT GAINS UP TO 200

JO  - IEEE T ELECTRON DEV

PY  - 1990/03/01

AU  - ROCKETT PI

AU  - PATE MA

AU  - CLAXTON PA

ED  - 

VL  - 37

IS  - 3

SP  - 810

EP  - 811

Y2  - 2024/12/22

ER  -