TY  - JOUR

T1  - Bismuth flux dependence of GaAsBi/GaAs MQWs grown by molecular beam epitaxy using two-substrate-temperature technique

JO  - Superlattices and Microstructures

PY  - 2017/06/01

AU  - Patil PK

AU  - Ishikawa F

AU  - Shimomura S

ED  - 

DO  - DOI: 10.1016/j.spmi.2017.03.021

PB  - Elsevier BV

VL  - 106

SP  - 50

EP  - 57

Y2  - 2024/12/22

ER  -