TY  - CONF

T1  - Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

JO  - SILICON CARBIDE AND RELATED MATERIALS 2008

PY  - 2009/01/01

AU  - Loh WS

AU  - David JPR

AU  - Ng BK

AU  - Soloviev SI

AU  - Sandvik PM

AU  - Ng JS

AU  - Johnson CM

ED  - PerezTomas A

ED  - Godignon P

ED  - Vellvehi M

ED  - Brosselard P

VL  - 615-617

SP  - 311

EP  - 314

Y2  - 2024/12/22

ER  -