TY  - CONF

T1  - Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

JO  - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

PY  - 1996/12/01

AU  - Boroumand FA

AU  - Khalid AH

AU  - Hopkinson M

AU  - Swanson JG

ED  - 

SP  - 51

EP  - 54

Y2  - 2024/12/22

ER  -