TY  - CONF

T1  - Growth, optical properties and device characterisation of InAs/GaAs quantum dot bilayers

JO  - PHYSICS-BASED MATHEMATICAL MODELS FOR LOW-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURES: ANALYSIS AND COMPUTATION

PY  - 2008/01/01

AU  - Clarke E

AU  - Spencer P

AU  - Harbord E

AU  - Howe P

AU  - Murray R

ED  - 

DO  - DOI: 10.1088/1742-6596/107/1/012003

VL  - 107

Y2  - 2024/12/22

ER  -