TY  - CONF

T1  - ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide

JO  - Microscopy of Semiconducting Materials

PY  - 2005/01/01

AU  - Walther T

AU  - Recnik A

AU  - Daneu N

ED  - Cullis AG

ED  - Hutchison JL

VL  - 107

SP  - 199

EP  - 202

Y2  - 2024/12/22

ER  -