TY  - JOUR

T1  - Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy

JO  - Physica Status Solidi (C) Current Topics in Solid State Physics

PY  - 2009/01/01

AU  - Shafi M

AU  - Mari RH

AU  - Henini M

AU  - Taylor D

AU  - Hopkinson M

ED  - 

DO  - DOI: 10.1002/pssc.200982561

VL  - 6

IS  - 12

SP  - 2652

EP  - 2654

Y2  - 2024/12/22

ER  -